t4 - lds -0 299 , rev . 1 ( 7/29/13 ) ?201 3 microsemi corporation page 1 of 4 2n1483 C 2n1486 available on commercial versions npn silicon m edium p ower transistor qualified per mil - prf - 19500/ 180 qualified levels : jan and jantx description this family of high - frequency , epitaxial planar transistors feature low saturation voltage. to -8 package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec register ed 2n 1483 through 2n 1486 series. ? jan and jantx qualifications are available per mil - prf - 19500/ 180 . ? rohs compliant versions available (commercial grade only) . applications / benefits ? general purpose transistors for medium power applications requiring hi gh frequency switching and low package profile. ? military and other high - reliability applications. maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol 2n1483 2n1485 2n1484 2n1486 unit collector - emitter voltage v ceo 40 55 v collector - base voltage v cbo 60 100 v emitter - base voltage v ebo 12 v collector current i c 3.0 a total power dissipation @ t a = +25 c (1) @ t c = + 25 c (2) pt 1.75 25 w operating & storage junction temperature range t j , t stg - 65 to +200 c notes : 1. derate linearly 0.010 mw/c for t a > +25 c. 2. derate linea rly 0.143 mw/c for t c > + 25 c. downloaded from: http:///
t4 - lds -0 299 , rev . 1 ( 7/29/13 ) ?201 3 microsemi corporation page 2 of 4 2n1483 C 2n1486 mechanical and packaging ? case: hermetically sealed, k ovar base, n ickel cap ? terminals : a lloy 52 with nickel plating and h ot s older d ip ( sn63/pb37 ) or matte - tin plating for rohs compliance (available on commercial grade only). ? ma rking: part number, d ate c ode, m anufacturers id ? polarity: see p ackage d imensions on last page. part nomenclature jan 2n1483 (e3) reliability level jan = jan level jantx = jantx level blank = commercial jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant symbols & definitions symbol definition c obo c ommon - base open - circuit output capacitance . i ceo c ollector cutoff current, base open . i cex c ollector cutoff current, circuit between base and emitter . i ebo e mitter cutoff current, collector open . h fe c ommon - emitter static forward current transfer rat io . v ceo c ollector - emitter voltage, base open . v cbo c ollector - emitter voltage, emitter open . v ebo e mitter - base voltage, collector open . downloaded from: http:///
t4 - lds -0 299 , rev . 1 ( 7/29/13 ) ?201 3 microsemi corporation page 3 of 4 2n1483 C 2n1486 electrical characteristics @ t a = +25 c, unless otherwise noted off character istics parameters / test conditi ons symbol min. max. unit collector - emitter breakdown current v (br)ceo v i c = 10 0 ma 2n1483 , 2n1485 2n1484 , 2n1486 40 55 collector - emitter cutoff current i cex 60 100 a v be = 1 .5 v, i c = 0.25 ma 2n1483 , 2n1485 2n1484 , 2n1486 collector - base cutoff current v cb = 30 v v cb = 50 v 2n1483 , 2n1485 2n1484 , 2n1486 i ceo 1 5.0 1 5.0 a emitter - base cutoff current v eb = 12 .0 v i ebo 15 a on character is tics (1) parameters / test conditions symbol min. max. unit forward - current transfer rati o h fe i c = 75 0 ma, v ce = 4 .0 v 2n1483 , 2n148 4 2n148 5 , 2n1486 20 35 60 100 collector - emitter saturation voltage v ce(sat) v i c = 750 a, i b = 75 m a i c = 750 a, i b = 40 m a 2n1483 , 2n148 4 2n148 5 , 2n1486 1.20 0.75 base - emitter voltage i c = 750 m a, v ce = 4.0 v v be 2.0 v dynamic characteristics parameters / test conditions symbol min. max. unit forward current transfer ratio f htb 600 khz i c = 5.0 m a, v cb = 28 v output capacitance c obo 40 0 pf v cb = 10 v, i e = 0, 100 khz f 1.0 mhz switching characteristics parameters / test conditions (for all symbols) symbol min. max. unit turn -on time v cc = 12 v , r c = 1 5.9 ?, i bo = i b2 = 35 ma, r b1 = 65 ma t on + t off 25 s notes: (1 ) pulse test: pulse width = 300 s, duty cycle 2. 0% . downloaded from: http:///
t4 - lds -0 299 , rev . 1 ( 7/29/13 ) ?201 3 microsemi corporation page 4 of 4 2n1483 C 2n1486 package dimensions 1. dimensions are in inches. 2. millimeters are given for general information only. 3. measured in the zone beyond 0.050 (1.27 mm) from seating plane . 4. the collector shall be internally connected to the case . 5. all three leads . dimensions symbol inch millimeters note min max min max cd 0.444 0.524 11.28 13.31 ch 0.270 0.330 6.86 8.38 hd 0.550 0.650 13.97 16.51 j 0.136 0.146 3.45 3.71 ld 0.027 0.033 0.69 0.84 3, 5 ll 0.360 0.440 9.14 11.18 5 q - 0.115 - 2.92 downloaded from: http:///
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